| PART |
Description |
Maker |
| BM831 BM831-18 |
0.7~1.4GHz High IIP3 GaAs MMIC Mixer with Integrated LO AMP
|
BeRex Corporation
|
| NGA-386 |
DC-5000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. High gain: 18.9 at 1950MHz.
DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier
|
STANFORD[Stanford Microdevices]
|
| Q62702-G44 CGY120 CGY120E6763 |
From old datasheet system
GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication)
MMIC-Amplifier for GSM/PCN
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MGFX39V0717 |
10.7-11.7GHz Band 8W Internally MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
| 400MS8E |
HIGH IP3 GaAs MMIC MIXER, 1.7 - 2.2 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC400MS8E HMC400MS808 |
HIGH IP3 GaAs MMIC MIXER, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| HMC400MS8 |
HIGH IP3 GaAs MMIC MIXER, 1.7 - 2.2 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC402MS8E HMC402MS808 |
HIGH IP3 GaAs MMIC MIXER, 1.8 - 2.2 GHz
|
Hittite Microwave Corporation
|
| XU1009-BD XU1009-BD-EV1 XU1009-BD-000V |
18.0-36.0 GHz GaAs MMIC Transmitter SPECIALTY TELECOM CIRCUIT, UUC12
18.0-36.0 GHz GaAs MMIC Transmitter 18.0-36.0 GHz的砷化镓单片发射
|
Mimix Broadband, Inc.
|
| MGFS45V2527A |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SSW208 SSW-208 |
DC-4 GHz High Isolation GaAs MMIC SPDT Switch
DC-4 GHz, High Isolation GaAs MMIC SPDT Switch
|
STANFORD[Stanford Microdevices]
|
